DF2265TE13V Renesas Electronics America, DF2265TE13V Datasheet - Page 589

• Manufacturer Part Number: DF2265TE13V
• Description: IC H8S/2265 MCU FLASH 100TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2265TE13V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 13MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 67
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

φ
V
FWE
MD2, MD1
RES
SWE1 bit
CC
Notes:
Period during which flash memory access is prohibited
(t
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations prohibited)
1.
2.
3.
4.
sswe
When entering boot mode or making a transition from boot mode to another mode, mode switching must be
carried out by means of RES input.
When making a transition from boot mode to another mode, a mode programming setup time t
ns is necessary with respect to RES clearance timing.
See section 25.2.8, Flash Memory Characteristics.
Wait time: 100µs.
: Wait time after setting SWE1 bit) *
(Example: Boot Mode → User Mode ↔ User Program Mode)
t
OSC1
SWE1 set
Mode
change
t
MDS
t
MDS
*
Figure 20.15 Mode Transition Timing
1
Boot
mode
3
*
4
SWE1
cleared
Mode
change
t
RESW
min 0µs
t
MDS
*
*
1
2
User
mode
Rev. 5.00 Sep. 01, 2009 Page 537 of 656
User program mode
*
4
*
4
User
mode
REJ09B0071-0500
Section 20 ROM
MDS
User program
mode
(min.) of 200