DF2265TE13V Renesas Electronics America, DF2265TE13V Datasheet - Page 560

IC H8S/2265 MCU FLASH 100TQFP

DF2265TE13V

Manufacturer Part Number
DF2265TE13V
Description
IC H8S/2265 MCU FLASH 100TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheets

Specifications of DF2265TE13V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
13MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2265TE13V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 20 ROM
20.3
Block Configuration
Figure 20.5 shows the block configuration of 256-kbyte flash memory of the H8S/2268. Figure
20.6 shows the block configuration of 128-kbyte flash memory of the H8S/2266 and H8S/2265.
The thick lines indicate erasing units, the narrow lines indicate programming units, and the values
are addresses. The flash memory of the H8S/2268 is divided into 4 kbytes (8 blocks), 32 kbytes (1
block), and 64 kbytes (3 blocks). The flash memory of the H8S/2266 and H8S/2265 is divided into
4 kbytes (8 blocks), 32 kbytes (1 block), and 64 kbytes (1 block). Erasing is performed in these
units. Programming is performed in 128-byte units starting from an address with lower eight bits
H'00 or H'80.
Rev. 5.00 Sep. 01, 2009 Page 508 of 656
REJ09B0071-0500

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