H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 61

58T1891

H27UAG8T2ATR-BC

Manufacturer Part Number
H27UAG8T2ATR-BC
Description
58T1891
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27UAG8T2ATR-BC

Memory Type
Flash - NAND
Memory Size
16Gbit
Memory Configuration
2048M X 8
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes

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Rev 1.0 / Aug. 2010
7.6. Page Program Failure
If the Page Program operation for page address N is fail, remain data in data register may be different to input data by
host. Therefore, do not attempt to program the page address N in another block without the data input sequence. The
same input sequence of 80h command, address and data is necessary.
7.7. Restriction Multi Plane Operation
To prevent abnormal multi plane operation, do not input bad block address to all Multi Plane Operation. Otherwise, the
input data of valid block could be lost and the operation could be abnormally stopped.
■ Figure 63. Restriction read status in multi plane operation
R/B#
I/Ox
80h
I/O6 =>
I/O5 =>
I/O1 =>
I/O0 =>
Address
Data
11h
70h
t
DBSY
Invalid
Invalid
Invalid
Valid
SR
out
81h
Address
Data
16Gb (2048M x 8bit) NAND Flash
10h
t
70h
PROG
Invalid
Invalid
H27UAG8T2B Series
Invalid
Valid
SR
out
70h
IO 0 = 0, Pass
IO 0 = 1, Fail
Invalid
Invalid
Release
Valid
Valid
SR
out
61

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