H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 57

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
■
Figure 58. Ready / Busy
Vcc
GND
Rp value guidence
Rp (min) =
where IL is the sum of the input current of all devices tied to the R/B# pin.
Rp(max) is determined by maximum permissible limit of tr
Device
Vcc (Max.) - V
R/B#
open drain output
I
OL +
Rp
L
300n
200n
100n
OL
(Max.)
ibusy
=
Ready Vcc
3.3
4.2
96
1k
@ Vcc = 3.3V, Ta = 25°C, C
Fig. Rp vs tr, tf & Rp vs ibusy
ibusy
3.2V
tf
tf
189
L
1.65
4.2
2k
16Gb (2048M x 8bit) NAND Flash
V
V
OL
Rp (ohm)
OL
: 0.4V, V
290
4.2
3k
1.1
L
=50pF
Busy
OH
: 2.4V
H27UAG8T2B Series
381
0.825
4.2
4k
tr
3m
2m
1m
V
OH
Release
57