H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 15

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
2.3. DC and Operating Characteristics
2.4. AC Test Conditions
Notes:
1.
Operating
Output Low Current (R/B#)
Current
Stand-by Current (CMOS)
Output Leakage Current
Stand-by Current (TTL)
Power on reset current
Input Leakage Current
Input and Output Timing Levels
These parameters are verified device characterization and are not 100% tested.
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Input Rise and Fall Times
Output Load (2.7V-3.6V)
Parameter
Input Pulse Levels
Parameter
Program
Erase
Read
Symbol
I
OL
I
I
I
I
I
I
V
B#)
V
I
V
V
I
CC0
CC1
CC2
CC3
CC4
CC5
LO
OH
LI
IH
OL
IL
(R/
CE#=V
FFh command input
V
V
OUT
IN
after power on
CE#=VCC-0.2,
t
WP#=0V/V
RC
=0 to V
I
Conditions
OH
I
I
=0 to V
V
CE#=V
OL
= t
OUT
OL
IH
=-200 ㎂
Test
=2.1 ㎃
1 TTL GATE and CL=50㎊
V
=0.4V
RC
, WP#=0V/
=0 ㎃
-
-
CC
-
-
2.7V ≤ Vcc ≤ 3.6V
(min),
CC
IL
CC(MAX)
(MAX)
16Gb (2048M x 8bit) NAND Flash
,
CC
0 V to V
Value
Vcc /2
5 ㎱
Vccx0.8
CC
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
-
H27UAG8T2B
H27UAG8T2B Series
Typ
3.3V
10
10
-
-
-
-
-
-
-
-
-
-
-
Vcc+0.3
0.2x Vcc
device
50per
± 10
± 10
Max
0.4
50
50
50
50
1
-
-
Release
Unit
㎃
㎃
㎃
㎃
㎃
㎂
㎂
㎂
㎃
V
V
V
V
15