H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 17

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
2.7. AC Timing Characteristics
Data transfer from cell to register
RE# or CE# high to output hold
Address to data loading time
RE# high to output high Z
CE# high to output high Z
Output high Z to RE# low
RE# high to output hold
RE# low to output hold
WE# high to RE# low
RE# high to WE# low
CE# low to RE# low
WE# high hold time
RE# high hold time
WE# high to busy
Ready to RE# low
ALE to RE# delay
CLE to RE# delay
WE# pulse width
RE# access time
RE# pulse width
Data setup time
Write cycle time
Read cycle time
CE# setup time
CLE setup time
ALE setup time
Data hold time
CLE Hold time
CE# hold time
ALE hold time
Parameter
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RHOH
RLOH
t
t
t
t
t
t
t
t
t
WHR
RHW
t
t
COH
ADL
CLH
ALS
ALH
CLR
REA
RHZ
CHZ
REH
CLS
WH
t
WP
WC
WB
CH
DS
DH
AR
RR
RC
CR
CS
RP
IR
R
16Gb (2048M x 8bit) NAND Flash
Min
100
100
100
12
20
12
12
12
25
10
10
10
25
12
25
15
15
10
10
5
5
5
5
5
0
3.3V
H27UAG8T2B Series
Max
200
100
100
20
50
Release
Unit
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㎲
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㎱
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