H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 35

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
3.22. Multi Plane Cache Program Operation Timings
Notes:
■ Figure 28. Multi plane cache program operation timings
1. t
2. Make sure to terminate the operation with 80h-10h- command sequence. If the operation is terminated, Issue
3. Selected Page address except A22 within two blocks must be same.
R/B#
R/B#
WE#
WE#
I/Ox
I/Ox
CLE
CLE
time + address input cycle time + Last page data loading time)
FFh reset before next operation.
CE#
CE#
ALE
ALE
PROG
A
= Program time for the last page + Program time for the (last -1)th page - (command input cycle
t
t
WC
WC
80h
80h
A0 ~ A13 : Valid
A14 ~ A21 Valid (Page M)
A22 : Fixed
A23 ~ A31 : Valid (Block J)
A0 ~ A13 : Valid
A14 ~ A21 Valid (Page M+n)
A22 : Fixed
A23 ~ A31 : Valid (Block J)
Add1
Add1
Col.
Col.
Add2
LOW
Add2
LOW
Col.
Col.
t
Add1
t
Add1
Row
Row
ADL
ADL
Add2
Add2
Row
Row
Add3
Add3
Row
Row
D
D
N
N
IN
IN
t
t
WB
WB
D
D
M
M
IN
IN
11h
11h
t
t
DBSY
DBSY
t
t
WC
WC
81h
81h
16Gb (2048M x 8bit) NAND Flash
Add1
Add1
Col.
Col.
A0 ~ A13 : Valid
A14 ~ A21 Valid (Page M)
A22 : Fixed
A23 ~ A31 : Valid (Block K)
A0 ~ A13 : Valid
A14 ~ A21 Valid (Page M+n)
A22 : Fixed
A23 ~ A31 : Valid (Block K)
Add2
Add2
Col.
Col.
Add1
Add1
Row
Row
High
High
t
t
ADL
ADL
Add2
Add2
Row
Row
H27UAG8T2B Series
Add3
Add3
Row
Row
D
D
N
N
IN
IN
D
D
M
M
IN
IN
15h
10h
Release
t
t
CBSYW
PROG
35
A