H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 33

58T1891

H27UAG8T2ATR-BC

Manufacturer Part Number
H27UAG8T2ATR-BC
Description
58T1891
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27UAG8T2ATR-BC

Memory Type
Flash - NAND
Memory Size
16Gbit
Memory Configuration
2048M X 8
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes

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Rev 1.0 / Aug. 2010
3.19. Multi Plane Page Program Operation Timings
Notes:
1. Any command between 11h and 81h is prohibited except 70h, 78h and FFh
2. t
3. Multi Plane Page addresses are required to be the same.
Figure 25. Multi plane page program operation timing
ADL
is the time from the WE# rising edge of final address cycle to the WE# rising edge of first data cycle.
R/B#
R/B#
WE#
WE#
I/Ox
CLE
CLE
I/Ox
CE#
CE#
ALE
ALE
RE#
A
t
t
WC
WC
80h
81h
A0 ~ A13 : Valid
A14 ~ A21 Valid (Page M)
A22 : Fixed
A23 ~ A31 : Valid (Block J)
A0 ~ A13 : Valid
A14 ~ A21 Valid (Page M)
A22 : Fixed
A23 ~ A31 : Valid (Block K)
Add1
Add1
Col.
Col.
Add2
LOW
Add2
High
Col.
Col.
Add1
Add1
Row
Row
Add2
t
Add2
Row
Row
ADL
Add3
Add3
Row
Row
D
D
N
N
IN
IN
N+1
N+1
D
D
IN
IN
16Gb (2048M x 8bit) NAND Flash
t
t
WB
WB
D
D
M
M
IN
IN
11h
10h
t
t
PROG
DBSY
H27UAG8T2B Series
A
70h
IO 0 = 0, pass
IO 0 = 1, fail
t
WHR
Status
Release
33

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