H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 12

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
1.9. Bad Block Management
Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the
blocks are valid. A Bad Block does not affect the performance of valid blocks because it is isolated from the bit line and
common source line by a select transistor. The devices are supplied with all the locations inside valid blocks erased
(FFh). The Bad Block Information is written prior to shipping. Any block where the 1st Byte in the spare area of either
the 1st or the last page does not contain FFh is a Bad Block. The Bad Block Information must be read before any erase
is attempted as the Bad Block Information may be erased. For the system to be able to recognize the Bad Blocks based
on the original information it is recommended to create a Bad Block table following the flowchart shown in Flow chart
1(
block at the time of shipment.
Notes:
■ Flow chart 1. Bad block management flow chart
Bad block management flow chart
1. Do not try to erase the detected bad blocks, because the bad block information will be lost.
2. Do not perform program and erase operation in invalid block, it is impossible to guarantee the input data
and to ensure that the function is normal.
Block No. = Block No. + 1
). The 1st block, which is placed on 00h block address, is guaranteed to be a valid
No
check column 8192
check col. 8192
of the last page
of the first page
Last Block
Block No = 0
Read FFh
Read FFh
Start
End
Pass
Yes
Pass
16Gb (2048M x 8bit) NAND Flash
Fail
Fail
Entry Bad Block
H27UAG8T2B Series
Release
12