H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 16

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
2.5. Pin Capacitance (T
2.6. Program/ Read / Erase Characteristics
Notes:
Program (following 10h)
Cache Program (following 15h)
multi plane Program / multi plane Cache
Program / multi plane Copy-Back Program
(following 11h)
Cache Read / multi plane Cache Read
(following 31h/3Fh)
Block Erase / multi plane Block Erase
Number of partial Program Cycles in the
same page
1. Typical value is measured at V
Symbol
C
C
I/O
IN
Parameter
Input/Output Capacitance
Input Capacitance
Parameter
CC
=3.3V, T
A
=25°C, F=1.0㎒)
A
=25℃. Not 100% tested.
Symbol
t
t
t
t
t
CBSYW
CBSYR
NOP
PROG
DBSY
BERS
Condition
V
V
IN =
IN =
Test
0V
0V
16Gb (2048M x 8bit) NAND Flash
Min
-
-
-
-
-
-
Min
-
-
1600
Typ
2.5
3
3
-
-
H27UAG8T2B Series
Max
10
10
Max
5000
5000
200
10
5
1
Unit
ß‹
ß‹
Release
cycles
Unit
㎲
㎲
㎲
㎲
㎳
16