H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 11

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
Caution:
1.8. Mode Selection
Notes:
1. Any undefined command inputs are prohibited except for above command set.
2. Multi Plane page read, Multi Plane cache read, and Multi Plane read for copy-back must be used after Multi Plane
1. X can be VIL or VIH. H = Logic level HIGH. L = Logic level LOW.
2. WP# should be biased to CMOS high or CMOS low for stand-by mode.
3. WE# and RE# during Read Busy must be keep on high to prevent unplanned command/address/data input or to
CLE
programmed page, Multi Plane cache program, and Multi Plane copy-back program.
avert unintended data out. In this time, only Reset, Read Status, and Multi Plane Read Status can be inputted to
the device.
H
H
X
X
X
X
X
L
L
L
L
ALE
H
L
X
H
X
X
X
X
L
L
L
1)
1)
1)
CE#
H
L
L
L
L
L
L
X
X
X
X
WE#
H
H
X
X
X
X
3)
RE#
H
H
H
H
H
H
X
X
X
X
3)
0V/Vcc
WP#
16Gb (2048M x 8bit) NAND Flash
H
H
H
H
H
X
X
X
X
L
2)
Write Mode
Read Mode
Sequential Read and Data Output
During Program (Busy)
H27UAG8T2B Series
During Erase (Busy)
During Read (Busy)
Write Protect
Address Input ( 5 Cycles )
Address Input ( 5 Cycles )
Data Input
Stand-By
MODE
Command Input
Command Input
Release
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