H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 58

58T1891

H27UAG8T2ATR-BC

Manufacturer Part Number
H27UAG8T2ATR-BC
Description
58T1891
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27UAG8T2ATR-BC

Memory Type
Flash - NAND
Memory Size
16Gbit
Memory Configuration
2048M X 8
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes

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Rev 1.0 / Aug. 2010
6.3. Write Protect Operation
The Erase and Program Operations are automatically reset when WP# goes Low (tWW = 100ns, min). The operations
are enabled and disabled as follows (Figure 59 ~ 62).
R/B#
WE#
WP#
I/Ox
WE#
WP#
R/B#
I/Ox
Figure 59. Enable Programming
t
WW
t
Figure 61. Enable Erasing
WW
80h
60h
10h
D0h
WE#
WP#
R/B#
I/Ox
WE#
WP#
R/B#
I/Ox
16Gb (2048M x 8bit) NAND Flash
Figure 60. Disable Programming
t
t
WW
WW
80h
60h
Figure 62. Disable Erasing
H27UAG8T2B Series
D0h
10h
Release
58

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