MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 75

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 46: Single WRITE Without Auto Precharge
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Command
BA0, BA1
Address
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
1. For this example, BL = 1 and the WRITE burst is followed by a manual PRECHARGE.
Disable auto precharge
t CL
t CMS
t DS
Column m
Bank
WRITE
T2
D
t CMH
IN
t DH
t CH
t WR
T3
NOP
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
75
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Single bank
PRECHARGE
All banks
Bank
T5
T6
NOP
t RP
PRECHARGE Operation
©2008 Micron Technology, Inc. All rights reserved.
Bank
Row
ACTIVE
T7
T8
NOP
Don’t Care