MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 10

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Ball Assignments and Descriptions
Figure 3: 54-Ball VFBGA (Top View)
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Note:
A
D
G
H
B
C
E
F
J
UDQM
1. The E2 pin must be connected to V
DQ14
DQ12
DQ10
DQ8
A1 2
V
V
A8
1
SS
SS
DQ15
DQ13
DQ11
DNU
DQ9
A11
CLK
A7
A5
2
1
V
V
V
V
CKE
V
A9
A6
A4
DDQ
DDQ
SSQ
SSQ
3
SS
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
4
10
5
SS
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
, V
Ball Assignments and Descriptions
SSQ
V
V
CAS#
V
V
BA0
V
, or left floating.
A0
A3
DDQ
DDQ
SSQ
SSQ
DD
7
LDQM
RAS#
DQ0
DQ2
DQ4
DQ6
BA1
A1
A2
8
WE#
DQ1
DQ3
DQ5
DQ7
V
A10
V
CS#
DD
DD
9
©2008 Micron Technology, Inc. All rights reserved.