MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 18

DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray

MT48H8M32LFB5-75 IT:H

Manufacturer Part Number
MT48H8M32LFB5-75 IT:H
Description
DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

Density
256 Mb
Maximum Clock Rate
133 MHz
Package
90VFBGA
Address Bus Width
14 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
8|6 ns
Operating Temperature
-40 to 85 °C
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (8Mx32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
90-VFBGA
Organization
8Mx32
Address Bus
14b
Access Time (max)
8/6ns
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 9: I
Notes 1, 5, 9, and 10 apply to all parameters and conditions; V
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Parameter/Condition
Self refresh:
CKE = LOW;
Address and control inputs are stable;
Data bus inputs are stable
DD7
t
CK =
Specifications and Conditions (x16 and x32)
t
CK (MIN);
Notes:
10. Values for I
1. A full initialization sequence is required before proper device operation is ensured.
2. I
3. The I
4. Address transitions average one transition every two clocks.
5. Measurement is taken 500ms after entering into this operating mode to provide tester
6. Other input signals can transition only one time for every two clocks and are otherwise
7. CKE is HIGH during REFRESH command period
8. Typical values at 25˚C (not a maximum value).
9. Enables on-die refresh and address counters.
minimum cycle time and the outputs open.
quency alteration for the test condition.
measuring unit settling time.
at valid V
is a nominal value and does not result in a fail value.
ture range. All other I
DD
is dependent on output loading and cycle rates. Specified values are obtained with
DD
current will increase or decrease proportionally according to the amount of fre-
IH
1/16 array, 85˚C
1/16 array, 45˚C
Full array, 85˚C
Full array, 45˚C
1/2 array, 85˚C
1/2 array, 45˚C
1/4 array, 85˚C
1/4 array, 45˚C
1/8 array, 85˚C
1/8 array, 45˚C
DD7
or V
85˚C full array and partial array are guaranteed for the entire tempera-
IL
levels.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
DD7
values are estimated.
18
DD
Electrical Specifications – I
/V
DDQ
= 1.70–1.95V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
t
RFC (MIN) else CKE is LOW. The I
I
300
190
250
150
230
130
220
120
200
110
DD7
©2008 Micron Technology, Inc. All rights reserved.
DD
Parameters
Unit
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
DD7
limit

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