MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 5

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

List of Tables
Table 1: Configuration Addressing ................................................................................................................... 1
Table 2: Key Timing Parameters ...................................................................................................................... 1
Table 3: VFBGA Ball Descriptions .................................................................................................................. 12
Table 4: Absolute Maximum Ratings .............................................................................................................. 15
Table 5: DC Electrical Characteristics and Operating Conditions ..................................................................... 15
Table 6: Capacitance ..................................................................................................................................... 16
Table 7: I
Table 8: I
Table 9: I
Table 10: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 20
Table 11: AC Functional Characteristics ......................................................................................................... 21
Table 12: Target Output Drive Characteristics (Full Strength) .......................................................................... 23
Table 13: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 24
Table 14: Target Output Drive Characteristics (One-Half Strength) ................................................................. 25
Table 15: Truth Table – Commands and DQM Operation ................................................................................ 27
Table 16: Truth Table – Current State Bank n, Command to Bank n ................................................................. 33
Table 17: Truth Table – Current State Bank n, Command to Bank m ................................................................ 35
Table 18: Truth Table – CKE .......................................................................................................................... 37
Table 19: Burst Definition Table .................................................................................................................... 42
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
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DD7
Specifications and Conditions (x16) ............................................................................................ 17
Specifications and Conditions (x32) ............................................................................................ 17
Specifications and Conditions (x16 and x32) ............................................................................... 18
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.