MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 63

DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray

MT48H8M32LFB5-75 IT:H

Manufacturer Part Number
MT48H8M32LFB5-75 IT:H
Description
DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

Density
256 Mb
Maximum Clock Rate
133 MHz
Package
90VFBGA
Address Bus Width
14 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
8|6 ns
Operating Temperature
-40 to 85 °C
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (8Mx32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
90-VFBGA
Organization
8Mx32
Address Bus
14b
Access Time (max)
8/6ns
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 34: WRITE – DQM Operation
Burst Read/Single Write
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Command
BA0, BA1
Address
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
Note:
t RCD
t CK
The burst read/single write mode is entered by programming the write burst mode bit
(M9) in the mode register to a 1. In this mode, all WRITE commands result in the access
of a single column location (burst of one), regardless of the programmed burst length.
READ commands access columns according to the programmed burst length and se-
quence, just as in the normal mode of operation (M9 = 0).
T1
NOP
1. For this example, BL = 4.
Disable auto precharge
Enable auto precharge
t CMS
t CL
t DS
Column m
WRITE
T2
Bank
D
t CMH
IN
t DH
t CH
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
T3
NOP
63
t DS
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
IN
t DH
t DS
T5
NOP
D
IN
t DH
©2008 Micron Technology, Inc. All rights reserved.
NOP
T6
WRITE Operation
NOP
T7
Don’t Care

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