MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 17

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications – I
Table 7: I
Note 1 applies to all parameters and conditions; V
Table 8: I
Note 1 applies to all parameters and conditions; V
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Parameter/Condition
Operating current: Active mode; Burst = 1; READ or WRITE;
(MIN)
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Nonpower-down mode; All banks idle; CKE = HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks ac-
tive; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks ac-
tive after
Operating current: Burst mode; READ or WRITE; All banks active, half
of DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
Parameter/Condition
Operating current: Active mode; Burst = 1; READ or WRITE;
(MIN)
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Nonpower-down mode; All banks idle; CKE = HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks ac-
tive; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks ac-
tive after
Operating current: Burst mode; READ or WRITE; All banks active, half
of DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
DD
DD
Specifications and Conditions (x16)
Specifications and Conditions (x32)
DD
t
t
t
t
DD
DD
RFC =
RFC = 7.8125μs
RFC =
RFC = 7.8125μs
Parameters
/V
/V
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
DDQ
DDQ
t
t
RFC (MIN)
RFC (MIN)
= 1.70–1.95V
= 1.70–1.95V
t
t
17
RC =
RC =
Electrical Specifications – I
t
t
RC
RC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
Symbol
I
I
I
I
I
I
I
I
I
DD2N
DD3N
I
I
I
I
DD2N
DD3N
I
I
I
DD2P
DD3P
DD2P
DD3P
DD1
DD4
DD5
DD6
DD1
DD4
DD5
DD6
I
I
ZZ
ZZ
300
105
110
300
100
95
15
20
10
60
15
20
90
10
-6
-6
3
5
3
5
Max
Max
©2008 Micron Technology, Inc. All rights reserved.
-75
300
100
300
-75
90
12
20
85
10
50
12
20
80
95
10
3
5
3
5
DD
Unit
Unit
Parameters
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
2, 3, 4, 6
2, 3, 4, 7
2, 3, 4, 6
2, 3, 4, 7
Notes
Notes
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
5, 8
5, 8
5
5