MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 39

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Command 1
Figure 12: Initialize and Load Mode Register
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
BA0, BA1
Address
DQM
CLK
CKE
A10
Power-up:
CLK stable
DQ
V
DD
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T = 100µs
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CKS
Notes:
NOP
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High-Z
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CKH
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1. PRE = PRECHARGE command, AR = AUTO REFRESH command, LMR = LOAD MODE REGIS-
2. NOPs or DESELECTs must only be provided during
3. NOPs or DESELECTs must only be provided during
TER command.
Precharge
All banks
all banks
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PRE
T1
t AH
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256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Tn + 1
AR
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RFC
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To + 1
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2
Load mode
t AS t AH
t
AS
register
BA0 = L,
BA1 = L
Code
Code
Tp + 1
LMR
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RFC time.
MRD time.
AH
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MRD
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Load extended
mode register
3
©2008 Micron Technology, Inc. All rights reserved.
BA0 = L,
BA1 = H
Code
BA0 = L,
Code
BA1 = L
LMR
Tq + 1
t
Initialization
MRD
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Valid
Valid
Valid
Valid
Tr + 1
Don’t Care
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