M306N4FGTFP Renesas Electronics America, M306N4FGTFP Datasheet - Page 345

IC M16C MCU FLASH 100QFP

M306N4FGTFP

Manufacturer Part Number
M306N4FGTFP
Description
IC M16C MCU FLASH 100QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/6Nr
Datasheets

Specifications of M306N4FGTFP

Core Processor
M16C/60
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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M16C/6N Group (M16C/6N4)
Rev.2.40
REJ09B0009-0240
Figure 22.17 Timing Diagram (3)
Apr 14, 2006
Measuring conditions :
tcyc =
Memory Expansion Mode and Microprocessor Mode
(For setting with no wait)
WR,WRL,
WRH
BCLK
Write timing
VCC = 5 V
Input timing voltage : V
Output timing voltage : V
BCLK
BHE
CSi
ADi
ALE
CSi
BHE
ALE
DBi
Read timing
ADi
RD
DBi
f(BCLK)
1
t
d(BCLK-AD)
t
d(BCLK-ALE)
t
page 321 of 376
(0.5 ✕ tcyc-45)ns.max
d(BCLK-ALE)
t
t
d(BCLK-CS)
d(BCLK-CS)
t
d(BCLK-AD)
25ns.max
25ns.max
25ns.max
Hi-Z
25ns.max
25ns.max
25ns.max
t
ac1(RD-DB)
tcyc
tcyc
t
40ns.min
SU(DB-RD)
t
IL
OL
d(BCLK-RD)
t
h(BCLK-ALE)
Hi-Z
= 0.8 V, V
= 0.4 V, V
t
h(BCLK-ALE)
-4ns.min
25ns.max
-4ns.min
IH
OH
t
= 2.0 V
t
h(BCLK-AD)
d(BCLK-WR)
t
= 2.4 V
h(BCLK-CS)
(0.5 ✕ tcyc-40)ns.min
t
d(BCLK-DB)
25ns.max
t
4ns.min
40ns.max
h(BCLK-RD)
0ns.min
0ns.min
t
t
d(DB-WR)
t
h(RD-DB)
0ns.min
h(RD-AD)
4ns.min
(0.5 ✕ tcyc-10)ns.min
t
t
h(WR-AD)
(0.5 ✕ tcyc-10)ns.min
h(BCLK-WR)
t
0ns.min
h(WR-DB)
t
h(BCLK-CS)
t
t
h(BCLK-DB)
h(BCLK-AD)
4ns.min
4ns.min
4ns.min
22. Electric Characteristics (Normal-ver.)
VCC = 5 V

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