M306N4FGTFP Renesas Electronics America, M306N4FGTFP Datasheet - Page 341

IC M16C MCU FLASH 100QFP

M306N4FGTFP

Manufacturer Part Number
M306N4FGTFP
Description
IC M16C MCU FLASH 100QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/6Nr
Datasheets

Specifications of M306N4FGTFP

Core Processor
M16C/60
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M306N4FGTFP
Manufacturer:
TI
Quantity:
3 001
Part Number:
M306N4FGTFP
Manufacturer:
RENESAS
Quantity:
36
Part Number:
M306N4FGTFP
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
M306N4FGTFP
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
M306N4FGTFP#UKJ
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
M306N4FGTFP#UKJ
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
M16C/6N Group (M16C/6N4)
Rev.2.40
REJ09B0009-0240
NOTES:
Switching Characteristics
(Referenced to VCC = 5 V, VSS = 0 V, at Topr = –40 to 85
Table 22.49 Memory Expansion Mode and Microprocessor Mode (for 1- to 3-wait setting and external area access)
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
d(BCLK-AD)
h(BCLK-AD)
h(RD-AD)
h(WR-AD)
d(BCLK-CS)
h(BCLK-CS)
d(BCLK-ALE)
h(BCLK-ALE)
d(BCLK-RD)
h(BCLK-RD)
d(BCLK-WR)
h(BCLK-WR)
d(BCLK-DB)
h(BCLK-DB)
d(DB-WR)
h(WR-DB)
d(BCLK-HLDA)
Symbol
3. This standard value shows the timing when the
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
output is off, and does not show hold time of
data bus.
Hold time of data bus varies with capacitor volume
and pull-up (pull-down) resistance value.
Hold time of data bus is expressed in
t = – CR ✕ ln (1 – V
by a circuit of the right figure.
For example, when V
R =1 kΩ, hold time of output “L” level is
t = – 30 pF ✕ 1 kΩ ✕ ln (1 – 0.2 V
Apr 14, 2006
0.5 ✕ 10
f(BCLK)
(n – 0.5) ✕ 10
Address output delay time
Address output hold time (in relation to BCLK)
Address output hold time (in relation to RD)
Address output hold time (in relation to WR)
Chip select output delay time
Chip select output hold time (in relation to BCLK)
ALE signal output delay time
ALE signal output hold time
RD signal output delay time
RD signal output hold time
WR signal output delay time
WR signal output hold time
Data output delay time (in relation to BCLK)
Data output hold time (in relation to BCLK)
Data output delay time (in relation to WR)
Data output hold time (in relation to WR)
__________
HLDA output delay time
f(BCLK)
9
– 10 [ns]
page 317 of 376
9
– 40 [ns]
OL
OL
/ V
= 0.2 V
CC
Parameter
)
CC
/ V
CC
When n = 1, f(BCLK) is 12.5 MHz or less.
n is “1” for 1-wait setting, “2” for 2-wait setting and “3” for 3-wait setting.
CC
, C = 30 pF,
) = 6.7 ns.
(3)
(3)
°
C unless otherwise specified)
Figure 22.14
Measuring
Condition
22. Electric Characteristics (Normal-ver.)
DBi
(NOTE 1)
(NOTE 2)
(NOTE 1)
Min.
–4
4
0
4
0
0
4
Standard
C
R
Max.
VCC = 5 V
25
25
15
25
25
40
40
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

Related parts for M306N4FGTFP