MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 62

IC DDR SDRAM 128MBIT 60VFBGA

MT46H8M16LFCF-10

Manufacturer Part Number
MT46H8M16LFCF-10
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheets

Specifications of MT46H8M16LFCF-10

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H8M16LFCF-10
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 IT
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 IT TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 40:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Case 1:
Case 2:
COMMAND
BA0, BA1
A11, A12
A0–A9
t
t
AC
AC
DQS
DQ
DQS
DQ
CK#
CKE
A10
DM
CK
(MIN)
(MAX)
5
1
1
and
and
Bank Read – With Auto Precharge
t
t
IS
IS
NOP 6
t
T0
DQSCK
t
DQSCK
t
Notes:
t
IH
IH
(MIN)
(MAX)
Bank x
t
t
IS
IS
1. D
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. PRE = PRECHARGE, ACT = ACTIVE, RA = Row address, BA = Bank address.
5. NOP commands are shown for ease of illustration; other commands may be valid at these
6. Refer to Figure 32 on page 55 and Figure 33 on page 56 for detailed DQS and DQ timing.
ACT
RA
RA
T1
RA
t
t
times.
IH
IH
t
OUT
CK
t
t
n = data-out from column n.
RAS
RCD
t
RC
NOP 6
T2
t
CH
t
CL
t
3
Bank x
IS
READ 2
Col n
T3
t
IH
62
NOP 6
T4
128Mb: 8 Meg x 16 Mobile DDR SDRAM
t
LZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 3
CL = 3
(MIN)
t
LZ
(MAX)
NOP
T5
t
AC
6
t
t
RPRE
AC
(MIN)
T5n
t
(MAX)
RPRE
t
RP
D
OUT
n
NOP 6
DON’T CARE
T6
D
OUT
n
t
t
DQSCK
DQSCK
Dout
n + 1
T6n
©2006 Micron Technology, Inc. All rights reserved.
D
n + 1
OUT
(MIN)
(MAX)
Timing Diagrams
D
n + 2
OUT
NOP 6
T7
D
n + 2
OUT
TRANSITIONING DATA
t
HZ
t
D
RPST
n + 3
t
HZ
OUT
(MIN)
t
D
n + 3
RPST
(MAX)
OUT
Bank x
ACT
T8
RA
RA
RA
Advance

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