MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 18

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
command is initiated like an AUTO REFRESH command except CKE is disabled (LOW).
All command and address input signals except CKE are “Don’t Care” during SELF
REFRESH.
During SELF REFRESH, the device is refreshed as identified in the external mode register
(see PASR setting). For a full array refresh, all four banks are refreshed simultaneously
with the refresh frequency set by an internal self refresh oscillator. This oscillator
changes due to the temperature sensors input. As the case temperature of the Mobile
DDR SDRAM increases, the oscillation frequency will change to accommodate the
change of temperature. This happens because the DRAM capacitors lose charge faster at
higher temperatures. To ensure efficient power dissipation during self refresh, the oscil-
lator will change to refresh at the slowest rate possible to maintain the devices data.
The procedure for exiting SELF REFRESH requires a sequence of commands. First, CK
must be stable prior to CKE going back HIGH. Once CKE is HIGH, the Mobile DDR
SDRAM must have NOP commands issued for
internal refresh in progress.
18
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
XSR is required for the completion of any
©2006 Micron Technology, Inc. All rights reserved.
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