MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 41

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power-Down (Active or Precharge)
Figure 29:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Power-Down Command (Active or Precharge)
Note:
Power-down (see Figure 30) is entered when CKE is registered LOW. If power-down
occurs when all banks are idle, this mode is referred to as precharge power-down; if
power-down occurs when there is a row active in any bank, this mode is referred to as
active power-down. Entering power-down deactivates the input and output buffers,
including CK and CK#. Exiting power-down requires the device to be at the same voltage
as when it entered power-down and a stable clock.
While in power-down, CKE LOW must be maintained at the inputs of the Mobile DDR
SDRAM, while all other input signals are “Don’t Care.” The power-down state is
synchronously exited when CKE is registered HIGH (in conjunction with a NOP or
DESELECT command). NOP or DESELECT commands must be maintained on the
command bus until
RAS#, CAS#, WE#
RAS#, CAS#, WE#
The power-down duration is limited by the refresh requirements of the device.
BA0–BA1
A0–A11
CKE
CK#
CS#
CS#
CK
t
PDX is satisfied.
BA0,1
DON’T CARE
OR
41
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
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