MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 49

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 15:
Figure 31:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Parameter/Condition
Operating burst write: One bank active; BL = 4;
Continuous WRITE bursts; Address inputs are switching; 50 percent
data changing each burst
Auto refresh: Burst refresh; CKE = HIGH; Address
and control inputs are switching; Data bus inputs
are stable
Precharge power-down standby current: All banks
idle, CKE is LOW; CS is HIGH;
Address and control inputs are switching every two
clock cycles; Data bus inputs are stable
Self refresh: CKE = LOW;
and control inputs are stable; Data bus inputs are
stable
I
Notes: 1–5, 7, 10, 12, 14 notes appear on pages 52–54; V
DD
Typical Self Refresh Current vs. Temperature
Specifications and Conditions (continued)
t
CK =
t
CK =
t
CK (MIN); Address
t
CK (MIN);
t
CK =
t
t
t
Full array, 85°C
Full array, 70°C
Full array, 45°C
Full array, 15°C
Half array, 85°C
Half array, 70°C
Half array, 45°C
Half array, 15°C
1/4 array, 85°C
1/4 array, 70°C
1/4 array, 45°C
1/4 array, 15°C
CK (MIN);
RC =
RC = 15.625µs
TBD
t
49
RC (MIN)
128Mb: 8 Meg x 16 Mobile DDR SDRAM
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q = +1.8 ±0.1V, V
Symbol
I
I
I
I
I
I
I
I
I
I
I
DD
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
4W
6b
6d
6b
6d
6b
6d
5a
6a
6c
6a
6c
6a
6c
5
105
-75
95
5
Max
Electrical Specifications
DD
300
220
180
160
220
180
160
150
180
160
150
145
= +1.8 ±0.1V
100
-10
90
©2006 Micron Technology, Inc. All rights reserved.
5
Units
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
Notes
Advance
24, 38
11, 39
11, 39
11, 39
11, 39
11, 39
11, 39
11, 39
11, 39
11, 39
11, 39
11, 39
11, 39
19
38