MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 35

IC DDR SDRAM 128MBIT 60VFBGA

MT46H8M16LFCF-10

Manufacturer Part Number
MT46H8M16LFCF-10
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheets

Specifications of MT46H8M16LFCF-10

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H8M16LFCF-10
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 IT
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 IT TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 23:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
WRITE-to-READ – Interrupting
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 4 is shown; two data elements are written.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. DQS is required at T2 and T2n (nominal case) to register DM.
6. If the burst of 8 was used, DM and DQS would be required at T3 and T3n because the READ
t
command would not mask these two data elements.
WTR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b
b = data-in for column b; D
IN
NOP
T1
D
b
IN
b+1
D
D
IN
b
IN
T1n
b+1
D
IN
b+1
D
IN
NOP
T2
t
WTR
T2n
35
Bank a,
READ
OUT
Col n
T3
n = data-out for column n.
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4
NOP
CL = 3
CL = 3
CL = 3
DON’T CARE
T5
NOP
T5n
©2006 Micron Technology, Inc. All rights reserved.
TRANSITIONING DATA
D
D
D
OUT
n
OUT
n
OUT
n
T6
NOP
D
n+1
D
n+1
D
OUT
n+1
OUT
T6n
OUT
Operations
Advance

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