MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 31

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 18:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
WRITE Burst
Notes:
1. D
2. An uninterrupted burst of 4 is shown.
3. A10 is LOW with the WRITE command (auto precharge is disabled).
COMMAND
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
ADDRESS
IN
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
b = data-in for column b.
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
D
b
IN
NOP
D
T1
b
IN
31
D
b+1
D
DON’T CARE
b
IN
IN
b+1
D
IN
b+2
D
b+1
D
IN
128Mb: 8 Meg x 16 Mobile DDR SDRAM
IN
NOP
b+2
D
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
D
b+2
b+3
D
IN
IN
T2n
D
b+3
TRANSITIONING DATA
IN
D
b+3
IN
T3
NOP
©2006 Micron Technology, Inc. All rights reserved.
Operations
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