MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 39

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 27:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
WRITE-to-PRECHARGE – Odd Number of Data, Interrupting
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 8 is shown.
3.
4. The READ and WRITE commands are to same device. However, the READ and WRITE com-
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. PRE = PRECHARGE command.
t
mands may be to different devices, in which case
mand could be applied earlier.
WR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b = data-in for column b.
b
IN
NOP
D
T1
b
IN
D
b
IN
T1n
NOP
T2
T2n
39
T3
NOP
128Mb: 8 Meg x 16 Mobile DDR SDRAM
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
NOP
T4
WR
DON’T CARE
t
WR is not required and the READ com-
T4n
(a or all)
T5
PRE
Bank
6
TRANSITIONING DATA
©2006 Micron Technology, Inc. All rights reserved.
T6
NOP
Operations
Advance