MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 57

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 35:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Bank Address
(BA0, BA1)
COMMAND 1
Addresses
V
DQS
CK#
CKE
A10
V
DD
DM
DQ
CK
DD
Q
Initialize and Load Mode Registers
Notes:
LVCMOS
HIGH LEVEL
T = 200µs
Power-up: V
NOP 2
2. NOP or DESELECT commands are required for at least 200µs.
3. Other valid commands are possible.
4. NOPs or DESELECTs are required during this time.
1. PRE = PRECHARGE command, LMR = LOAD MODE REGISTER command, AR = AUTO REFRESH
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DD
command, ACT = ACTIVE command, RA = Row address, BA = Bank address.
and CK stable
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T0
NOP
High-Z
High-Z
t IH
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t
CK
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CL
ALL BANKS
t IS
PRE
T1
t IH
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t RP 4
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Ta0
AR
57
t RFC 4
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Load Standard Mode Register
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Tb0
AR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RFC 4
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t IS
t IS
t IS
BA0 = L,
BA1 = L
CODE
CODE
Tc0
LMR
t IH
t IH
t IH
Load Extended Mode
t MRD 4
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Register
BA0 = L,
BA1 = H
CODE
CODE
Td0
LMR
t MRD 4
©2006 Micron Technology, Inc. All rights reserved.
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Timing Diagrams
Te0
ACT
RA
RA
BA
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DON’T CARE
Tf0
NOP 3
Advance