mt47h64m16hw-3 Micron Semiconductor Products, mt47h64m16hw-3 Datasheet - Page 36

• Manufacturer Part Number: mt47h64m16hw-3
• Description: 1gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Table 13:
REFRESH-
to-
ACTIVATE
or to-
REFRESH
interval
Average periodic
refresh
(commercial)
Average periodic
refresh (industrial)
Average periodic
refresh
(automotive)
CKE LOW to CK,
CK# uncertainty
Exit SELF REFRESH
to nonREAD
command
Exit SELF REFRESH
to READ command
Exit SELF REFRESH
timing reference
Exit active
power-
down to
READ
command
Exit precharge
power-down to
any nonREAD
command
CKE MIN HIGH/
LOW time
Parameter
AC Characteristics
AC Operating Specifications and Conditions for -187E, -25E, -3E, -3, -37E, and -5E Speeds (Sheet 6 of 7)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported;
Notes: 1–5 (page 38) apply to the entire table; V
256Mb
512Mb
1Gb
2Gb
MR12
= 0
MR12
= 1
Symbol
t
t
t
t
DELAY
t
t
REFI
t
XARD
t
REFI
XSNR
XSRD
t
t
REFI
ISXR
t
CKE
RFC
XP
AT
IT
127.5
197.5
Min
105
10 -
AL
75
–
–
–
3
3
-187E
Max
7.8
3.9
3.9
–
–
–
8 - AL
127.5
197.5
Min
105
75
–
–
2
2
–
-25E
Max
7.8
3.9
3.9
–
–
–
DD
Q = +1.8V ±0.1V, V
8 - AL
127.5
197.5
Min
105
75
–
–
–
2
2
-25
MIN limit =
MIN limit =
Max
7.8
3.9
3.9
–
–
–
MAX limit = n/a
MAX limit = n/a
MAX limit = n/a
MAX limit = n/a
MIN limit = 200
MIN limit =
7 - AL
MAX = n/a
127.5
197.5
Min
105
MIN = 3
75
2
2
–
–
–
DD
t
RFC (MIN) + 10
-3E
t
IS +
= +1.8V ±0.1V
Max
7.8
3.9
3.9
t
–
–
–
CK +
t
IS
7 - AL
127.5
197.5
t
Min
105
IH
75
–
–
–
2
2
-3
Max
7.8
3.9
3.9
–
–
–
6 - AL
127.5
197.5
Min
105
75
2
2
–
–
–
-37E
Max
7.8
3.9
3.9
–
–
–
6 - AL
127.5
197.5
Min
105
75
–
–
–
2
2
-5E
Max
7.8
3.9
3.9
–
–
–
Units Notes
t
t
t
t
t
ns
µs
µs
µs
ns
ns
CK
ps
CK
CK
CK
CK
18, 41
18, 41
18, 41
18, 41
33, 43
18, 44
42
18
18
18
18