mt47h64m16hw-3 Micron Semiconductor Products, mt47h64m16hw-3 Datasheet - Page 100

• Manufacturer Part Number: mt47h64m16hw-3
• Description: 1gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Figure 60:
Figure 61:
PDF: 09005aef8117c187/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 1Gb DDR2: Rev. N; Core DDR2: Rev. C 4/08 EN
Consecutive WRITE-to-WRITE
Nonconsecutive WRITE-to-WRITE
Notes:
Notes:
t DQSS (NOM)
1. Subsequent rising DQS signals must align to the clock within
2. DI b, etc. = data-in for column b, etc.
3. Three subsequent elements of data-in are applied in the programmed order following DI b.
4. Three subsequent elements of data-in are applied in the programmed order following DI n.
5. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
6. Each WRITE command may be to any bank.
t DQSS (NOM)
1. Subsequent rising DQS signals must align to the clock within
2. DI b (or n), etc. = data-in for column b (or column n).
3. Three subsequent elements of data-in are applied in the programmed order following DI b.
4. Three subsequent elements of data-in are applied in the programmed order following DI n.
5. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
6. Each WRITE command may be to any bank.
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
CK#
DM
DQ
CK#
DM
CK
DQ
CK
WRITE
WRITE
Bank,
Col b
Bank,
Col b
T0
T0
WL ± t DQSS
WL ±
WL = 2
WL = 2
t CCD
NOP
NOP
T1
T1
t
DQSS
100
T1n
WRITE
Bank,
Col n
NOP
T2
T2
DI
DI
b
b
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T2n
T2n
WL = 2
WRITE
Bank,
Col n
NOP
T3
1
1
T3
1Gb: x4, x8, x16 DDR2 SDRAM
T3n
T3n
WL = 2
NOP
T4
NOP
1
T4
DI
n
Transitioning Data
Transitioning Data
t
T4n
t
T4n
DQSS.
DQSS.
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1
T5
NOP
NOP
1
DI
T5
n
T5n
T5n
Operations
NOP
1
T6
NOP
Don’t Care
T6
Don’t Care
T6n