mt47h64m16hw-3 Micron Semiconductor Products, mt47h64m16hw-3 Datasheet - Page 28

• Manufacturer Part Number: mt47h64m16hw-3
• Description: 1gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Table 11:
PDF: 09005aef821ae8bf/Source: 09005aef821aed36
1Gb_DDR2_x4x8x16_D2.fm - 1Gb DDR2: Rev. N; Core DDR2: Rev. C 4/08 EN
Parameter/Condition
Self refresh current: CK and CK# at 0V;
CKE ≤ 0.2V; Other control and address bus inputs
are floating; Data bus inputs are floating
Operating bank interleave read current: All
bank interleaving reads, I
CL = CL (I
t
t
valid commands; address bus inputs are stable
during deselects; Data bus inputs are switching; See
“Idd7 Conditions” on page 26 for details
CK =
RCD =
t
CK (I
t
RCD (I
DD
DD
), AL =
DDR2 I
Notes: 1–7 (page 30) apply to the entire table
),
DD
t
RC =
); CKE is HIGH, CS# is HIGH between
t
RCD (I
t
DD
RC (I
OUT
DD
Specifications and Conditions (Die Revision A) (continued)
DD
) - 1 ×
),
= 0mA; BL = 4,
t
RRD =
t
CK (I
t
RRD (I
DD
);
DD
),
Symbol Configuration
I
I
I
DD
DD
DD
6L
6
7
28
Electrical Specifications – I
x4, x8, x16
x4, x8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
x16
1Gb: x4, x8, x16 DDR2 SDRAM
-25E/
335
440
-25
7
5
-3E/-3
300
350
7
5
©2004 Micron Technology, Inc. All rights reserved.
-37E
290
340
7
5
DD
Parameters
260
330
-5E
7
5
Units
mA
mA