N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 52

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

8
52/185
HOLD
W/V
DQ0
DQ2
DQ1
DQ3
PP
C
S
Memory organization
The memory is organized as:
Each page can be individually programmed (bits are programmed from 1 to 0). The device is
Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable, Subsector
Erase is allowed on the 8 boot sectors (for devices with bottom or top architecture).
Figure 9.
16,777,216 bytes (8 bits each)
256 sectors (64 Kbytes each)
In Bottom and Top versions: 8 bottom (top) 64 Kbytes boot sectors with 16 subsectors
(4 Kbytes) and 248 standard 64 KB sectors
65,536 pages (256 bytes each)
64 OTP bytes located outside the main memory array
Address Register
Control Logic
and Counter
Block diagram
00000h
I/O Shift Register
256 bytes (page size)
High Voltage
Generator
X Decoder
Data Buffer
256 Byte
FFFFFFh
000FFh
64 OTP bytes
Register
Status
AI13722a