N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 175
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N25Q128A11B1240E
Manufacturer Part Number
N25Q128A11B1240E
Description
Manufacturer
NUMONYX
Datasheet
1.N25Q128A11B1240E.pdf
(185 pages)
Specifications of N25Q128A11B1240E
Cell Type
NOR
Density
128Mb
Access Time (max)
7ns
Interface Type
Serial (SPI)
Boot Type
Bottom
Address Bus
1b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
TBGA
Program/erase Volt (typ)
1.7 to 2/8.5 to 9.5V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
2V
Word Size
8b
Number Of Words
16M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
24
Lead Free Status / Rohs Status
Supplier Unconfirmed
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Table 34.
1. All values are guaranteed by characterization and not 100% tested in production.
2. The device reset is possible but not guaranteed if tRLRH < 50 ns.
tRLRH
tRHSL
tSHRV
tDP
tRDP
Symbol
(1)
(1)(2)
(1)
Reset Conditions
tRST
tREC
Figure 109. Serial input timing
Alt.
S
C
DQ0
DQ1
Reset pulse width
Reset Recovery
Time
S# deselect to R
valid
tCHSL
Parameter
tDVCH
High Impedance
MSB IN
Device selected (S low), while decoding
any modify instruction, during all read
operations, CLFSR, WRDI, WREN,
WRLR, WRVCR, WRVECR.
Under completion of an internal erase or
program cycle related to POTP, PP, DIEFP,
DIFP, QIEFP, QIFP, SE, BE, PER, PES.
Under completion of an SSE operation.
Under completion of an WRSR operation.
Under completion of an WRNVCR
operation.
Under completion of the first WREN issued
when Fast POR selected.
Device deselected (S high) and in XiP
mode.
Device deselected (S high) and in Standby
mode.
Deselect to R valid in Quad Output or in
QIO-SPI.
S High to Deep Power Down mode
S High to Standby mode
tSLCH
tCHDX
Conditions
tCLCH
tCHSH
LSB IN
50
40
30
40
40
2
3
30
Min
tCHCL
tSHSL
t
t
t
t
SSE
W
WNVCR
DTW
Typ
tSHCH
Max Unit
AI13728
175/185
ns
µs
ns
µs
ms
ms
ms
µs
ns
ns
ns
µs
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