N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 155

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

9.3.22
DQ0
DQ1
DQ3
DQ2
S
C
Figure 96. Read Volatile Configuration Register instruction sequence QIO-SPI
Write Volatile Configuration Register
The Write Volatile Configuration register (WRVCR) instruction allows new values to be
written to the Volatile Configuration register. Before it can be accepted, a write enable
(WREN) instruction must previously have been executed. In case of Fast POR, the WREN
instruction is not required because a WREN instruction gets the device out from the Fast
POR state (See
Apart form the parallelizing of the instruction code and the input data on the four pins DQ0,
DQ1, DQ2 and DQ3, the instruction functionality is exactly the same as the Write Volatile
Configuration Register (WRVCR) instruction of the Extended SPI protocol, please refer to
Section 9.1.31: Write Volatile Configuration Register
Instruction
0
Section 11.1: Fast
1
2
5
4
6
7
3
1
0
2
3
4
5
4
6
7
Volatile Configuration Register Out
5
1
0
2
3
POR).
6
5
4
6
7
7
1
0
2
3
8
5
4
6
7
9 10 11 12 13 14 15
1
0
3
2
for further details.
5
4
7
6
1
0
3
2
4
5
7
6
0
1
3
2
4
5
7
6
0
1
3
2
Quad_Read_VCR
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