N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 39

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

6.2.7
6.3
Dual Input NV configuration bit (NVCR bit 2)
The Dual Input NV configuration bit can be used to make the memory start working in DIO-
SPI protocol directly after the power on sequence. The products are delivered with this set
to 1, making the memory default in Extended SPI protocol, if the application sets this bit to 0
the device will enter in QIO-SPI protocol right after the next power on.
Please note that in case both QIO-SPI and DIO-SPI are enabled (both bit 3 and bit 2 of the
Non Volatile Configuration Register set to 0), the memory will work in QIO-SPI.
Volatile Configuration Register
The Volatile Configuration Register (VCR) affects the memory configuration after every
execution of Write Volatile Configuration Register (WRVCR) instruction: this instruction
overwrite the memory configuration set at POR by the Non Volatile Configuration Register
(NVCR). Its purpose is to define the dummy clock cycles number and to make the device
ready to enter in the required XIP mode.
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