N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 41

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N25Q128A11B1240E

Manufacturer Part Number
N25Q128A11B1240E
Description
Manufacturer
NUMONYX
Datasheet

Specifications of N25Q128A11B1240E

Cell Type
NOR
Density
128Mb
Access Time (max)
7ns
Interface Type
Serial (SPI)
Boot Type
Bottom
Address Bus
1b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
TBGA
Program/erase Volt (typ)
1.7 to 2/8.5 to 9.5V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
2V
Word Size
8b
Number Of Words
16M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
24
Lead Free Status / Rohs Status
Supplier Unconfirmed
6.3.2
6.4
XIP Volatile Configuration bits (VCR bit 3)
The bit 3 of the Volatile Configuration Register is the XIP enabling bit, this bit must be set to
0 to enable the memory working on XIP mode. For devices with a feature set digit equal to 2
or 4 in the part number (Basic XiP), this bit is always Don't Care, and it is possible to operate
the memory in XIP mode without setting it to 0. See
Volatile Enhanced Configuration Register
The Volatile Enhanced Configuration Register (VECR) affects the memory configuration
after every execution of Write Volatile Enhanced Configuration Register (WRVECR)
instruction: this instruction overwrite the memory configuration set during the POR
sequence by the Non Volatile Configuration Register (NVCR). Its purpose is:
enabling of QIO-SPI protocol and DIO-SPI protocol
HOLD (Reset) functionality disabling
To enable the VPP functionality in Quad I/O modify operations
To define output driver strength (3 bit)
Warning:
WARNING: in case of both QIO-SPI and DIO-SPI enabled, the
memory works in QIO-SPI
Section 16: Ordering
information.
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