N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 108

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N25Q128A11B1240E

Manufacturer Part Number
N25Q128A11B1240E
Description
Manufacturer
NUMONYX
Datasheet

Specifications of N25Q128A11B1240E

Cell Type
NOR
Density
128Mb
Access Time (max)
7ns
Interface Type
Serial (SPI)
Boot Type
Bottom
Address Bus
1b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
TBGA
Program/erase Volt (typ)
1.7 to 2/8.5 to 9.5V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
2V
Word Size
8b
Number Of Words
16M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
24
Lead Free Status / Rohs Status
Supplier Unconfirmed
9.1.30
108/185
S
C
DQ0
DQ1
As soon as Chip Select (S) is driven High, the self-timed write NV configuration register
cycle (whose duration is tnvcr) is initiated.
While the Write Non Volatile Configuration register cycle is in progress, it is possible to
monitor the end of the process by polling status Register write in progress (WIP) bit or the
Flag Status Register Program/Erase Controller bit. The write in progress (WIP) bit is 1
during the self-timed Write Non Volatile Configuration register cycle, and is 0 when it is
completed. When the cycle is completed, the write enable latch (WEL) is reset.
The Write Non Volatile Configuration register (WRNVCR) instruction allows the user to
change the values of all the Non Volatile Configuration Register bits, described in
Non-Volatile Configuration
The Write Non Volatile Configuration Register impacts the memory behavior only after the
next power on sequence.
Figure 37. Write NV Configuration Register instruction sequence
Read Volatile Configuration Register
The Read Volatile Configuration Register (RDVCR) instruction allows the Volatile
Configuration Register to be read. See
0
1
High Impedance
2
Instruction
3
4
5
6
Register.
7
7
8
6
9 10 11 12 13 14 15
5
LS Byte
Table 6.: Volatile Configuration
Byte
4
3
2
1
NVCR In
0
15 14 13 12
16 17 18 19 20
MS Byte
Byte
Register.
11 10 9
21 22 23 24
Write_NVCR
Table 4.:
8

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