CY8CTMG200-16LGXIT Cypress Semiconductor Corp, CY8CTMG200-16LGXIT Datasheet - Page 36

• Manufacturer Part Number: CY8CTMG200-16LGXIT
• Description: IC MCU 32K FLASH 16-COL
• Manufacturer: Cypress Semiconductor Corp
• Series: TrueTouch™r

Specifications of CY8CTMG200-16LGXIT

• Applications: Touchscreen Controller
• Core Processor: M8C
• Program Memory Type: FLASH (32 kB)
• Controller Series: CY8CT
• Ram Size: 2K x 8
• Interface: I²C, SPI, UART/USART, USB
• Number Of I /o: 13
• Voltage - Supply: 1.8 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-QFN
• Processor Series: CY8CTxx2xx
• Core: M8C
• Data Bus Width: 8 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

An MVI A, [expr] instruction is used to move data from
SRAM into Flash. Therefore, use the MVI read pointer
(MVR_PP register) to specify which SRAM page from which
data is pulled. Using the MVI read pointer and the parameter
blocks POINTER value allows the SROM WriteBlock func-
tion to move data from any SRAM page into any Flash block.
The SRAM address, the first of the 128 bytes to store in
Flash, is indicated using the POINTER variable in the
parameter block (SRAM address FBh).
Table 3-8. WriteBlock Parameters (02h)
3.1.2.4
The EraseBlock function is not recommended for use. The
functionality is redundant with the WriteBlock and WriteAnd-
Verify functions. The only practical use is for clearing all data
in a 128 byte block of contiguous bytes in Flash to 0x00. If
used, it should not be called repeatedly on the same block. It
may be used between WriteAndVerify or WriteBlock opera-
tions.
If write protection is turned on, then the EraseBlock function
exits, setting the accumulator and KEY2 back to 00h. KEY1
has a value of 01h, indicating a write failure.
To set up the parameter block for the EraseBlock function,
store the correct key values in KEY1 and KEY2. The block
number to erase must be stored in the BLOCKID variable.
Table 3-9. EraseBlock Parameters (03h)
3.1.2.5
The PSoC devices offer Flash protection on a block-by-
block basis.
In the table, ER and EW indicate the ability to perform exter-
nal reads and writes (that is, by an external programmer).
For internal writes, IW is used. Internal reading is always
permitted by way of the ROMX instruction. An SR indicates
the ability to read by way of the SROM ReadBlock function.
Supervisory ROM (SROM)
36
MVR_PP
KEY1
KEY2
BLOCKID
POINTER
KEY1
KEY2
BLOCKID
Name
Name
Address
0,D4h
0,F8h
0,F9h
0,FAh
0,FBh
0,F8h
0,F9h
0,FAh
Address
Table 3-10
EraseBlock Function
ProtectBlock Function
Register
RAM
RAM
RAM
RAM
RAM
RAM
RAM
Type
Type
lists the protection modes available.
MVI read page pointer register.
3Ah.
Stack Pointer value+3, when
executed.
Flash block number.
First of 128 addresses in SRAM, where
the data to be stored in Flash, is located
before calling WriteBlock.
3Ah.
Stack Pointer value+3, when SSC is
executed.
Flash block number.
Description
Description
PSoC CY8CTMG20x and CY8CTST200 TRM, Document No. 001-53603 Rev. *C
SSC
is
In this table, note that all protection is removed by EraseAll.
Table 3-10. Protect Block Modes
Table 3-11. Protection Level Bit Packing
3.1.2.6
The TableRead function gives the user access to part-spe-
cific data stored in the Flash during manufacturing. The
Flash for these tables is separate from the program Flash
and is not directly accessible. It also returns a revision ID for
the die (do not confuse this with the silicon ID stored in the
Table 0 row in
There are four 8-byte tables in the CY8CTMG20x,
CY8CTST200 devices.
Table 3-12. TableRead Parameters (06h)
3.1.2.7
The EraseAll function performs a series of steps that
destroys the user data in the Flash banks and resets the
protection block in each Flash bank to all zeros (the unpro-
tected state). This function is only executed by an external
programmer. If EraseAll is executed from code, the M8C
HALTs without touching the Flash or protections. See
3-13. The three other hidden blocks above the protection
block, in each Flash bank, are not affected by the EraseAll.
Table 3-13. EraseAll Parameters (05h)
00b
01b
10b
11b
Block n+3
KEY1
KEY2
BLOCKID
KEY1
KEY2
Mode
Name
Name
7
SR ER EW IW
SR ER EW IW
SR ER EW IW
SR ER EW IW
6
0,F8h
0,F9h
0,F8h
0,F9h
0,FAh
Address
Address
Settings
TableRead Function
EraseAll Function
Table
Block n+2
5
RAM
RAM
RAM
RAM
RAM
3-14).
Type
Type
Unprotected
Read protect
Disable external write
Disable internal write
4
Description
3Ah.
Stack Pointer value+3, when SSC is
executed.
Table number to read.
3Ah.
Stack Pointer value+3, when SSC is
executed.
Block n+1
3
Description
Description
2
U = Unprotected
F = Factory upgrade
R = Field upgrade
W = Full protection
In PSoC Designer
Block n
1
Table
0
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