D13002F16V Renesas Electronics America, D13002F16V Datasheet - Page 147

• Manufacturer Part Number: D13002F16V
• Description: IC H8/3002 ROMLESS 100QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of D13002F16V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 38
• Program Memory Type: ROMless
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

6.3.6 Interconnections with Memory (Example)
For each area, the bus controller can select two- or three-state access and an 8- or 16-bit data bus
width. In three-state-access areas, wait states can be inserted in a variety of modes, simplifying the
connection of both high-speed and low-speed devices.
Figure 6-18 shows an example of interconnections between the H8/3002 and memory. Figure 6-17
shows a memory map for this example.
A 256-kword
16-bit bus.
Two 32-kword 8-bit SRAM devices (SRAM1 and SRAM2) are connected to area 1. These
devices are accessed in two states via a 16-bit bus.
One 32-kword 8-bit SRAM (SRAM3) is connected to area 2. This device is accessed via an
8-bit bus, using three-state access with an additional wait state inserted in pin auto-wait mode.
16-bit EPROM is connected to area 0. This device is accessed in three states via a
H'000000
H'03FFFF
H'1FFFFF
H'200000
H'20FFFF
H'210000
H'3FFFFF
H'400000
H'407FFF
H'5FFFFF
H'FFFFFF
Figure 6-17 Memory Map (Example)
On-chip registers
On-chip RAM
SRAM 1, 2
Not used
Not used
Not used
SRAM 3
EPROM
130
Area 0
16-bit, three-state-access area
Area 1
16-bit, two-state-access area
Area 2
8-bit, three-state-access area
(one pin auto-wait state)