MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 8

• Manufacturer Part Number: MT46H8M32LFB5-6:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1280-2; MT46H8M32LFB5-6:A TR

Figure 3:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
BA0, BA1
A0–A11,
CAS#
RAS#
WE#
CKE
CK#
CS#
CK
14
Functional Block Diagram (8 Meg x 32)
Address
register
Standard mode
Extended mode
register
register
Notes:
Control
logic
12
12
1. JEDEC-standard x32 DQ configuration shown.
9
2
counter
Refresh
address
2
Row-
MUX
13
Column-
Counter/
address
control
12
Bank
logic
latch
decoder
address
Bank 0
Row-
Latch
and
8
1
8,192
(4,096 x 256 x 64)
Sense amplifiers
DM mask logic
I/O gating
decoder
Column
Memory
Bank 0
(x64)
array
4,092
256
Bank 1
8
Bank 2
Bank 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64
256Mb: x16, x32 Mobile DDR SDRAM
64
64
READ
latch
out
CK
CK
WRITE
drivers
FIFO
and
32
32
CK
in
MUX
COL 0
MASK
DATA
COL 0
64
8
CK
4
4
32
32
generator
DQS
registers
32
Input
General Description
©2005 Micron Technology, Inc. All rights reserved.
DATA
4
4
32
32
4
4
32
DQS
DRVRS
4
RCVRS
DQM0
DQM1
DQM2
DQM3
DQS0
DQS1
DQS2
DQS3
DQ0–
DQ31