MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 29

• Manufacturer Part Number: MT46H8M32LFB5-6:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1280-2; MT46H8M32LFB5-6:A TR

Figure 14:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Commmand
Command
READ Burst
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
Notes:
CK
CK
Bank a,
Bank a,
1. D
2. BL = 4.
3. Shown with nominal
READ
READ
Col n
Col n
T0
T0
OUT
n = data-out from column n.
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
t
AC,
D
OUT
NOP
n
NOP
T2
t
T2
DQSCK, and
29
D
n+1
T2n
T2n
OUT
D
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
t
OUT
n
n+2
256Mb: x16, x32 Mobile DDR SDRAM
NOP
NOP
T3
T3
DQSQ.
OUT
Transitioning data
D
n+1
T3n
D
T3n
n+3
OUT
OUT
D
n+2
T4
NOP
T4
NOP
OUT
D
n+3
OUT
©2005 Micron Technology, Inc. All rights reserved.
T5
NOP
T5
NOP
Don’t Care
Operations