MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 72

• Manufacturer Part Number: MT46H8M32LFB5-6:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1280-2; MT46H8M32LFB5-6:A TR

Figure 44:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Address
CKE
DQS
Self Refresh Mode
CK#
CK
DM
DQ
1
1
4
Notes:
t
IS
t
IS
t
NOP
RP
T0
2
1. Clock must be stable, cycling within specifications by Ta0, before exiting self refresh mode.
2. Device must be in the all banks idle state prior to entering self refresh mode.
3. NOPs or DESELECT is required for
4. AR = AUTO REFRESH command.
5. CKE must remain LOW to remain in self refresh mode.
t
t
IH
IH
t
CH
t
CL
t
IS
AR
T1
Enter self refresh mode
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t
XSR time with at least two clock pulses.
Ta0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
1
t
CK
t
NOP
IS
Ta1
Exit self refresh mode
t
XSR
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3
©2005 Micron Technology, Inc. All rights reserved.
t
VALID
IS
VALID
Timing Diagrams
Tb0
Don’t Care
t
IH