MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 32

• Manufacturer Part Number: MT46H8M32LFB5-6:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1280-2; MT46H8M32LFB5-6:A TR

Figure 17:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Command
Address
Address
Random READ Accesses
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
Bank,
Col n
READ
READ
Bank,
Col n
T0
T0
1. D
2. BL = 2, 4, or 8 (if 4 or 8, the following burst interrupts the previous).
3. READs are to an active row in any bank.
4. Shown with nominal
OUT
CL = 2
n (or x, b, g) = data-out from column n (column x, column b, column g).
READ
Bank,
READ
Bank,
Col x
Col x
T1
T1
CL = 3
T1n
T1n
t
AC,
D
READ
Bank,
OUT
n
READ
Bank,
Col b
Col b
T2
T2
t
DQSCK, and
32
D
n+1
T2n
T2n
OUT
D
D
OUT
n
READ
READ
Bank,
Bank,
Col g
T3
Col g
T3
OUT
x
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
256Mb: x16, x32 Mobile DDR SDRAM
Transitioning data
DQSQ.
D
n+1
D
T3n
T3n
x+1
OUT
OUT
D
D
T4
T4
OUT
x
NOP
NOP
OUT
b
D
x+1
T4n
T4n
D
OUT
b+1
OUT
©2005 Micron Technology, Inc. All rights reserved.
D
T5
T5
D
NOP
NOP
OUT
b
Don’t Care
OUT
g
T5n
T5n
D
b+1
D
g+1
OUT
OUT
Operations