MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 70

• Manufacturer Part Number: MT46H8M32LFB5-6:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1280-2; MT46H8M32LFB5-6:A TR

Figure 42:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Address
DQS
CK#
CKE
DM
DQ
CK
Power-Down Mode (Active or Precharge)
Notes:
t IS
t IS
t IS
VALID
VALID
T0
t IH
t IH
t IH
1
1. If this command is a PRECHARGE (or if the device is already in the idle state), then the
2. No column accesses are allowed to be in progress at the time power-down is entered.
3. There must be at least one clock pulse during
t CK
power-down mode shown is precharge power-down. If this command is an ACTIVE (or if at
least one row is already active), then the power-down mode shown is active power-down.
power-down
t IS
mode
Enter
NOP
T1
t CH
2
Must not exceed refresh device limits
t CL
T2
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70
Ta0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
power-down
t
XP time.
mode
NOP
Ta1
Exit
3
NOP
t XP
Ta2
©2005 Micron Technology, Inc. All rights reserved.
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Timing Diagrams
Don’t Care
VALID
VALID
Tb1