MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 7

• Manufacturer Part Number: MT46H8M32LFB5-6:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1280-2; MT46H8M32LFB5-6:A TR

Functional Block Diagrams
Figure 2:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
BA0, BA1
A0–A12,
CAS#
RAS#
WE#
CKE
CK#
CS#
CK
15
Functional Block Diagram (16 Meg x 16)
Address
register
Extended mode
Standard mode
register
register
Control
logic
13
13
9
2
Refresh
counter
address
2
Row-
MUX
13
Counter/
Column-
address
control
13
Bank
latch
logic
decoder
address
Bank 0
Latch
Row-
and
8
1
8,192
Sense amplifiers
(8,192 x 256 x 32)
DM mask logic
I/O gating
decoder
Memory
Column
Bank 0
16,384
(x32)
array
256
Bank 1
7
Bank 2
Bank 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
32
32
32
Read
latch
out
CK
CK
WRITE
drivers
FIFO
and
16
16
CK
in
MUX
COL 0
MASK
DATA
COL 0
32
4
CK
2
2
16
16
generator
DQS
registers
16
Input
General Description
©2005 Micron Technology, Inc. All rights reserved.
Data
2
2
16
16
2
2
16
DRVRS
DQS
2
RCVRS
DQ0–
DQ15
LDQS,
UDQS
LDM,
UDM