MT46H8M32LFB5-6:A TR Micron Technology Inc, MT46H8M32LFB5-6:A TR Datasheet - Page 30

• Manufacturer Part Number: MT46H8M32LFB5-6:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1280-2; MT46H8M32LFB5-6:A TR

Figure 15:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Command
Address
Address
Consecutive READ Bursts
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Shown with nominal
4. Example applies only when READ commands are issued to the same device.
OUT
CL = 2
n (or b) = data-out from column n (or column b).
NOP
NOP
T1
T1
CL = 3
T1n
t
AC,
D
READ
Bank,
READ
Bank,
Col b
Col b
OUT
n
T2
T2
t
DQSCK, and
30
D
n+1
T2n
T2n
OUT
D
D
OUT
n+2
n
NOP
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
T3
OUT
t
256Mb: x16, x32 Mobile DDR SDRAM
DQSQ.
Transitioning data
D
n+1
D
T3n
T3n
n+3
OUT
OUT
D
n+2
D
T4
NOP
T4
NOP
OUT
OUT
b
D
n+3
T4n
T4n
D
OUT
b+1
OUT
©2005 Micron Technology, Inc. All rights reserved.
D
T5
NOP
T5
NOP
D
Don’t Care
b+2
OUT
b
OUT
D
T5n
T5n
b+1
b + 3
D
OUT
OUT
Operations