W971GG6JB-25 Winbond Electronics, W971GG6JB-25 Datasheet - Page 47

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W971GG6JB-25

Manufacturer Part Number
W971GG6JB-25
Description
IC DDR2-800 SDRAM 1GB 84-WBGA
Manufacturer
Winbond Electronics
Datasheet

Specifications of W971GG6JB-25

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (64M x 16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-WBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q5804012

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Notes:
1. All voltages are referenced to V
2. Tests for AC timing, I
3. AC timing reference load:
4. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min)
5. If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ
6. This is an optional feature. For detailed information, please refer to “operating temperature condition” section 9.2 in this data
7. tCKE min of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the
8. A minimum of two clocks (2 * nCK) is required irrespective of operating frequency.
9. tWTR is at least two clocks (2 * nCK) independent of operation frequency.
10. There are two sets of values listed for Command/Address input setup time: tIS(base) and tIS(ref). The tIS(ref) value (for
Logic levels
V
VDDQ
REF
DUT
levels, but the related specifications and device operation are guaranteed for the full voltage range specified. ODT is
disabled for all measurements that are not ODT-specific.
have been satisfied.
can be executed.
sheet.
valid input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not
transition from its valid level during the time period of tIS + 2 x tCK + tIH.
reference only) is equivalent to the baseline value of tIS(base) at VREF when the slew rate is 1.0 V/nS. The baseline value
tIS(base) is the JEDEC defined value, referenced from the input signal crossing at the VIH(ac) level for a rising signal and
VIL(ac) for a falling signal applied to the device under test. See Figure 17. If the Command/Address slew rate is not equal to
1.0 V/nS, then the baseline values must be derated by adding the values from table of tIS/tIH derating values for DDR2-667,
DDR2-800 and DDR2-1066 (page 55).
CLK
CLK
levels
Figure 16
Figure 17
DQS, DQS
DQ
Output
DD
AC timing reference load
Differential input waveform timing – tIS and tIH
t
Timing
reference
point
, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage
t
IS(ref)
IS(base)
SS
.
t
IH(base)
25Ω
t
IH(ref)
VTT = VDDQ/2
t
IS(ref)
t
IS(base)
- 47 -
t
IH(base)
t
IH(ref)
Publication Release Date: Mar. 28, 2011
V
V
V
V
V
V
V
DDQ
IH(ac)
IH(dc)
REF(dc)
IL(dc)
IL(ac)
SS
W971GG6JB
max
max
min
min
Revision A07

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