W971GG6JB-25 Winbond Electronics, W971GG6JB-25 Datasheet - Page 24

• Manufacturer Part Number: W971GG6JB-25
• Description: IC DDR2-800 SDRAM 1GB 84-WBGA
• Manufacturer: Winbond Electronics

Specifications of W971GG6JB-25

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-WBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q5804012

7.4.2
Burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or
from memory locations (read cycle). The parameters that define how the burst mode will operate are
burst sequence and burst length. The DDR2 SDRAM supports 4 bit and 8 bit burst modes only. For 8
bit burst mode, full interleave address ordering is supported, however, sequential address ordering is
nibble based for ease of implementation. The burst length is programmable and defined by MR A[2:0].
The burst type, either sequential or interleaved, is programmable and defined by MR [A3]. Seamless
burst read or write operations are supported.
CLK /CLK
DQS/DQS
DQS/DQS
CLK/CLK
CMD
CMD
Burst mode operation
DQ
DQ
-1
-1
where AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL - 1) = 4, BL = 4
where AL = 0 and CL = 3, RL = (AL + CL) = 3, WL = (RL - 1) = 2, BL = 4
Figure 14 – Example 1: Read followed by a write to the same bank,
Figure 15 – Example 2: Read followed by a write to the same bank,
A-Bank
A-Bank
Active
Active
0
[AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL - 1) = 4, BL = 4]
0
AL = 0 and CL = 3, RL = (AL + CL) = 3, WL = (RL - 1) = 2, BL = 4]
A-Bank
≥ t
Read
1
≥ t
1
RCD
RCD
AL=2
2
2
AL=0
A-Bank
Read
3
3
RL=AL+CL=5
RL=AL+CL=3
CL=3
4
4
A-Bank
CL=3
Write
- 24 -
5
5
6
6
Dout0
Dout0 Dout1 Dout2 Dout3
Dout1 Dout2 Dout3
A-Bank
Write
WL=RL-1=4
7
7
Publication Release Date: Mar. 28, 2011
WL=RL-1=2
8
8
Din0
Din0
9
9
W971GG6JB
Din1
Din1
10
Din2
Din2
10
Din3
Din3
11
11
Revision A07
12
12