W971GG6JB-25 Winbond Electronics, W971GG6JB-25 Datasheet - Page 29

• Manufacturer Part Number: W971GG6JB-25
• Description: IC DDR2-800 SDRAM 1GB 84-WBGA
• Manufacturer: Winbond Electronics

Specifications of W971GG6JB-25

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-WBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q5804012

Notes:
1. RTP[cycles] = RU{ tRTP[nS] / tCK(avg)[nS] }, where RU stands for round up.
2. For a given bank, the precharge period should be counted from the latest precharge command, either one bank precharge or
7.8
DDR2 SDRAM requires a refresh of all rows in any rolling 64 ms interval. The necessary refresh can
be generated in one of two ways: by explicit Auto Refresh commands or by an internally timed Self
Refresh mode.
Self Refresh mode enters issuing the Self Refresh command (CKE asserted "LOW") while all banks
are in the idle state. The device is in Self Refresh mode for as long as CKE held "LOW". In the case
of 8192 burst Auto Refresh commands, 8192 burst Auto Refresh commands must be performed within
7.8 µS before entering and after exiting the Self Refresh mode. In the case of distributed Auto Refresh
commands, distributed auto refresh commands must be issued every 7.8 µS and the last distributed
Auto Refresh commands must be performed within 7.8 µS before entering the self refresh mode. After
exiting from the Self Refresh mode, the refresh operation must be performed within 7.8 µS. In Self
Refresh mode, all input/output buffers are disable, resulting in lower power dissipation (except CKE
buffer). (Example timing waveform refer to 10.28 Self Refresh diagram in Chapter 10)
7.9
Power-down is synchronously entered when CKE is registered LOW, along with NOP or Deselect
command. CKE is not allowed to go LOW while mode register or extended mode register command
time, or read or write operation is in progress. CKE is allowed to go LOW while any other operation
such as row activation, Precharge or Auto-precharge or Auto Refresh is in progress, but power down
I
The DLL should be in a locked state when power-down is entered. Otherwise DLL should be reset
after exiting power-down mode for proper read operation.
Read w/AP
Write w/AP
Command
DD
Precharge
Precharge
precharge all, issued to that bank. The precharge period is satisfied after tRPall (= tRP + 1 x tCK) depending on the latest
precharge command issued to that bank.
From
Read
Write
specification will not be applied until finishing those operations.
All
Refresh Operation
Power Down Mode
Precharge (to same Bank as Read w/AP)
Precharge (to same Bank as Write w/AP)
Precharge (to same Bank as Precharge)
Precharge (to same Bank as Read)
Precharge (to same Bank as Write)
Table 5 – Precharge & Auto-precharge clarifications
To Command
Precharge All
Precharge All
Precharge All
Precharge All
Precharge All
Precharge All
Precharge
- 29 -
Minimum Delay between “From
Command” to “To Command”
AL + BL/2 + max(RTP, 2) - 2
AL + BL/2 + max(RTP, 2) - 2
AL + BL/2 + max(RTP, 2) - 2
AL + BL/2 + max(RTP, 2) - 2
WL + BL/2 + t
WL + BL/2 + t
WL + BL/2 + WR
WL + BL/2 + WR
Publication Release Date: Mar. 28, 2011
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1
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WR
WR
W971GG6JB
Unit
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Revision A07
Notes
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